Magnetic-Field-Induced Band-Structure Change in CeBiPt
نویسندگان
چکیده
منابع مشابه
Magnetic-field-induced band-structure change in CeBiPt.
We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above approximately 25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBi...
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The half-Heusler compounds CeBiPt and LaBiPt are semimetals with very low charge-carrier concentrations as evidenced by Shubnikov–de Haas (SdH) and Hall-effect measurements. Neutron-scattering results reveal a simple antiferromagnetic structure in CeBiPt below TN = 1.15 K. The band structure of CeBiPt sensitively depends on temperature, magnetic field and stoichiometry. Above a certain, sample-...
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The temperature dependence of the electronic structure of CeBi arising from two types of antiferromagnetic transitions based on optical conductivity (σ(ω)) was observed. The σ(ω) spectrum continuously and discontinuously changes at 25 and 11 K, respectively. Between these temperatures, two peaks in the spectrum rapidly shift to the opposite energy sides as the temperature changes. Through a com...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2005
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.95.086403